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PI2127 Datasheet(PDF) 15 Page - Vicor Corporation |
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PI2127 Datasheet(HTML) 15 Page - Vicor Corporation |
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15 / 19 page ![]() Picor Corporation • picorpower.com PI2127 Rev 1.3 Page 15 of 19 At maximum response time: A nH ns V L t V I PARASITIC RVS S PEAK 5 . 112 60 150 * 45 * = = = Avalanche Energy: 2 * * * 3 . 1 * 3 . 1 * 2 1 PEAK PARASITIC S DSS DSS AS I L V BV BV E − = J A nH V V E AS μ 897 5 . 112 * 60 * 45 60 * 3 . 1 60 * 3 . 1 * 2 1 2 = − = The avalanche energy is well below the total MOSFET specified peak current of 150A for 300ns and below the rated avalanche energy. The specified energy can be calculated from Single Pulse Avalanche Current as specified in the Absolute Maximum Ratings table: mJ s A V t I BV AV AS DSS 14 11 33 60 3 . 1 2 1 * 3 . 1 2 1 = ⋅ ⋅ ⋅ = ⋅ ⋅ ⋅ μ Figure 23 : Two PI2127 in High Side ORing configuration VC bias through Constant current circuit Select an NPN transistor with VCEO equal or higher than the input voltage (Vin) plus any expected transient voltage and capable of handling the expected maximum power dissipation. Any NPN transistor with VCEO ≥ 60V in a small footprint is suitable. An exemplary NPN is the BC846 from NXP Semiconductors: From the BC846 datasheet: NPN general-purpose transistor VCEO = 65V Collector-Emitter maximum voltage IC = 100mA maximum collector current hFE = 110 minimum at IC=2mA VBE = 0.580V to 0.70V Base-Emitter voltage at IC = 2mA and 25°C RθJ-A = 500°C/W Junction to ambient thermal resistance. Select Zener Diode: A Zener diode with low bias current and VZ=10 in small foot print is suitable for this application. An exemplary Zener diode is the MM3Z10VST1 the from ON Semiconductor From the MM3Z10VST1 datasheet: 10V, 200mW Zener Diode VZ = 9.80V to 10.2V Zener voltage range IR = 10μA will hold the Zener breakdown voltage at 9.8V Ω = − = − = k mA V V I on V V R MAX VC BE MIN Z LIMIT 33 . 4 1 . 2 7 . 0 8 . 9 ) ( _ _ Or 4.32kΩ 1% A mA h I I MIN FE MAX C MAX B μ 27 . 27 110 3 _ _ _ = = = RZ Calculation: Use 120μA as minimum for the Zener diode reverse leakage current and Q2 base current combined. Ω = − = + − = k A V V I I V V R MAX B Z MAX Z MIN in Z 248 120 2 . 10 40 _ _ _ μ Select RZ= 249kΩ 1% Maximum Q1 collector current: mA k V V R V V I MIN LIMIT MIN BE MAX Z MAX C 29 . 2 98 . 0 * 32 . 4 50 . 0 2 . 10 _ _ _ _ = Ω − = − = Maximum Q2 power dissipation )] ( [ * _ _ _ 1 MAX EB MIN Z CLM VC MAX MAX C Q V V V Vin I Pd − − − = − mW V V V V mA Pd Q 57 )] 7 . 0 8 . 9 ( 11 45 [ * 29 . 2 1 = − − − = Transistor temperature rise C W C mW R Pd T A J Q RISEQ ° = ° = = − 50 . 28 500 * 57 * 1 1 θ |
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