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BUL312FH Datasheet(PDF) 1 Page - STMicroelectronics

Part # BUL312FH
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL312FH Datasheet(HTML) 1 Page - STMicroelectronics

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August 2002
BUL312FH
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
„
HIGH VOLTAGE CAPABILITY
„
LOW SPREAD OF DYNAMIC PARAMETERS
„
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
„
VERY HIGH SWITCHING SPEED
„
FULLY CHARACTERIZED AT 125 °C
„
LARGE R.B.S.O.A.
„
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
„
HORIZONTAL DEFLECTION FOR COLOR TV
„
SWITCH MODE POWER SUPPLIES
„
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching
speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide R.B.S.O.A.
ABSOLUTE MAXIMUM RATINGS
Ordering Code
Marking
Shipment
BUL312FH
BUL312FH
Tube
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
1150
V
VCEO
Collector-Emitter Voltage (IB = 0)
500
V
VEBO
Emitter-Base Voltage (IC = 0)
9V
IC
Collector Current
5
A
ICM
Collector Peak Current (tp < 5 ms)
10
A
IB
Base Current
3
A
IBM
Base Peak Current (tp < 5 ms)
4A
Ptot
Total Dissipation at Tc = 25 °C
36
W
Visol
Insulation Withstand Voltage (RMS) from All Three
Leads to External Heatsink
2500
V
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
TO-220FH
INTERNAL SCHEMATIC DIAGRAM


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