BUL312FH datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

BUL312FH

2/6

THERMAL DATA

ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)

* Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %.

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

3.47

62.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1150 V

Tj = 125 °C

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 500 V

250

µA

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

500

VCE(sat)*

Collector-Emitter

Saturation Voltage

IC = 1 A

IC = 2 A

IC = 3 A

IB = 200 mA

IB = 400 mA

IB = 600 mA

0.5

0.7

1.1

VBE(sat)*

Base-Emitter

Saturation Voltage

IC = 1 A

IC = 2 A

IC = 3 A

IB = 200 mA

IB = 400 mA

IB = 600 mA

1.1

1.2

hFE*

DC Current Gain

IC = 10 mA

IC = 3 A

VCE = 5 V

VCE = 2.5 V

816

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2 A

IB1 = 400 mA

L = 200 µH

(See Figure 1)

Vclamp = 250 V

VBE(off) = -5 V

RBB = 0

1.2

1.9

160

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2 A

IB1 = 400 mA

L = 200 µH

Tj = 125 °C

Vclamp = 250 V

VBE(off) = -5 V

RBB = 0

(See Figure 1)

1.8

150

µs

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