US1M datasheet(3/5 Pages) SMC

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SANGDEST

MICROELECTRONICS

Technical Data

Green Products

Data Sheet N1372, Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

US1M

Maximum Ratings and Electrical Characteristics @T

A=25°C unless otherwise specified

Characteristic

Symbol

US1M

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

1000

Maximum Average Rectified Output Current

@TA = 100°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

IFSM

Maximum Forward Voltage

@IF =1.0A, TJ=25°C

V F

1.7

Peak Reverse Current

@TA = 25°C

At Rated DC Blocking Voltage

@TA = 100°C

IRM

5.0

100

µA

Typical Thermal Resistance Junction to Lead (Note 1)

RθJL

K/W

Maximum Reverse Recovery Time (Note 2)

Trr

100

Typical Junction Capacitance (Note 3)

Operating and Storage Temperature Range

TJ, TSTG

-65 to +175

°C

Case Style

SMA

Note: 1. Mounted on P.C. Board with 8.0mm

2 lead area

2. Measured with IF=0.5A; IR=1.0A; IRR=0.25A.

3. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC

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