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STF140N6F7 Datasheet(PDF) 3 Page - STMicroelectronics |
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STF140N6F7 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() STF140N6F7 Electrical ratings DocID027730 Rev 3 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at Tcase = 25 °C 70 A Drain current (continuous) at Tcase = 100 °C 50 IDM(2) Drain current (pulsed) 280 A PTOT Total dissipation at Tcase = 25 °C 33 W EAS(3) Single pulse avalanche energy 250 mJ dV/dt(4) Drain-body diode dynamic dV/dt ruggedness 7.1 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 °C) 2500 V Tstg Storage temperature -55 to 175 °C Tj Maximum junction temperature 175 Notes: (1) Current is limited by package. (2) Pulse width is limited by safe operating area. (3) Starting Tj = 25°C, ID = 20 A, VDD = 30 V. (4)ISD= 70 A; di/dt = 600 A/μs; VDD = 48 V; Tj < Tjmax Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 4.5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 |
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