STF140N6F7 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STF140N6F7

4/13

DocID027730 Rev 3

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 60 V

µA

VGS = 0 V, VDS = 60 V,

Tj = 125 °C

100

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 35 A

0.0031

0.0035

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

3100

Coss

Output capacitance

1520

Crss

Reverse transfer

capacitance

193

Total gate charge

VDD = 30 V, ID = 70 A,

VGS = 10 V (see Figure 14: "Test

circuit for gate charge behavior")

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 35 A RG = 4.7

Ω,

VGS = 10 V (see Figure 13: "Test

circuit for resistive load switching

times" and Figure 18: "Switching

time waveform")

Rise time

td(off)

Turn-off delay time

Fall time

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