STL33N65M2 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STL33N65M2

Description	N-channel 650 V, 0.124 (ohm0 typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 15 page

STL33N65M2

Electrical characteristics

DocID026089 Rev 3

5/15

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current

(pulsed)

VSD (2)

Forward on voltage

ISD = 24 A, VGS = 0 V

1.6

trr

Reverse recovery

time

ISD = 24 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 16: " Test

circuit for inductive load switching

and diode recovery times")

426

Qrr

Reverse recovery

charge

µC

IRRM

Reverse recovery

current

33.5

trr

Reverse recovery

time

ISD = 24 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 16: " Test circuit for

inductive load switching and diode

recovery times")

544

Qrr

Reverse recovery

charge

µC

IRRM

Reverse recovery

current

36.5

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

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