STM8AL3146 datasheet(80/124 Pages) STMICROELECTRONICS

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Electrical parameters

STM8AL313x/4x/6x STM8AL3L4x/6x

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DocID18474 Rev 7

9.3.5

Memory characteristics

TA = -40 to 125 °C unless otherwise specified.

Flash memory

Table 36. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode (1)

Halt mode (or Reset)

1.65

1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware registers (only in

Halt mode). Guaranteed by characterization, not tested in production.

Table 37. Flash program memory/data EEPROM memory

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage

(all modes, read/write/erase)

fSYSCLK = 16 MHz

1.65

3.6

tprog

Programming time for 1 or 128 bytes (block)

erase/write cycles (on programmed byte)

Programming time for 1 to 128 bytes (block)

write cycles (on erased byte)

Iprog

Programming/ erasing consumption

TA=+25 °C, VDD = 3.0 V

0.7

TA=+25 °C, VDD = 1.8 V

Table 38. Flash program memory

Symbol

Parameter

Conditions

Min

Max

Unit

TWE

Temperature for writing and erasing

-40

125

°C

NWE

Flash program memory endurance

(erase/write cycles)(1)

TA = 25 °C

1000

cycles

tRET

Data retention time

TA = 25 °C

years

TA = 55 °C

1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a write/erase

operation addresses a single byte.

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