ATF35143 datasheet(2/19 Pages) HP

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ATF-35143 Absolute Maximum Ratings[1]

Absolute

Symbol

Parameter

Units

Maximum

VDS

Drain - Source Voltage [2]

5.5

VGS

Gate - Source Voltage [2]

V-5

VGD

Gate Drain Voltage [2]

V-5

IDS

Drain Current [2]

Idss[3]

Pdiss

Total Power Dissipation [4]

300

Pin max

RF Input Power

dBm

TCH

Channel Temperature

°C

160

TSTG

Storage Temperature

°C

-65 to 160

Thermal Resistance [5]

°C/W

310

Notes:

1. Operation of this device above any one

of these parameters may cause

permanent damage.

2. Assumes DC quiesent conditions.

3. VGS = 0 V

4. Source lead temperature is 25

°C.

Derate 3.2 mW/

°C for T

L > 67°C.

5. Thermal resistance measured using

150

°C Liquid Crystal Measurement

method.

Product Consistency Distribution Charts

[7, 8]

Notes:

6. Under large signal conditions, VGS may

swing positive and the drain current may

exceed Idss. These conditions are

acceptable as long as the maximum Pdiss

and Pin max ratings are not exceeded.

7. Distribution data sample size is 450

samples taken from 9 different wafers.

Future wafers allocated to this product

may have nominal values anywhere

within the upper and lower spec limits.

8. Measurements made on production test

board. This circuit represents a trade-off

between an optimal noise match and a

realizeable match based on production test

requirements. Circuit losses have been de-

embedded from actual measurements.

VDS (V)

Figure 1. Typical Pulsed I-V Curves [6].

(VGS = -0.2 V per step)

120

100

+0.6 V

0 V

–0.6 V

OIP3 (dBm)

Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.

LSL=19.0, Nominal=20.9, USL=23.0

120

100

-3 Std

+3 Std

Cpk = 1.73

Std = 0.35

NF (dB)

Figure 3. NF @ 2 GHz, 2 V, 15 mA.

LSL=0.2, Nominal=0.37, USL=0.7

0.2

0.4

0.3

0.6

0.5

0.7

200

160

120

-3 Std

+3 Std

Cpk = 3.7

Std = 0.03

GAIN (dB)

Figure 4. Gain @ 2 GHz, 2 V, 15 mA.

LSL=16.5, Nominal=18.0, USL=19.5

160

120

-3 Std

+3 Std

Cpk = 2.75

Std = 0.17

88759/05-4.PM6.5J

2001.04.26, 9:16 AM

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