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MJ2955A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ2955A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistors MJ2955A ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -3.0 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -15A; IB= -7A -5.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V -1.8 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 -0.7 mA IEBO Emitter Cutoff Current VEB= -7.0V; IC=0 -5.0 mA hFE-1 DC Current Gain IC= -4A ; VCE= -2V 10 70 hFE-2 DC Current Gain IC= -4A ; VCE= -4V 20 70 hFE-3 DC Current Gain IC= -10A ; VCE= -4V 5 fT Current Gain-Bandwidth Product IC= -1.0A ; VCE= -10V;ftest= 1.0MHz 18 MHz *:Pulse test:Pulse width≤300us,duty cycle≤2% |
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