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MJ2955A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJ2955A
Description  Silicon PNP Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ2955A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistors
MJ2955A
DESCRIPTION
·
Excellent Safe Operating Area
·
DC Current Gain-
: hFE=20-70@IC= -4A
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A
·
Complement to Type 2N3055A
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·
Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.52
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-15
A
IB
Base Current
-7
A
PC
Collector Power Dissipation
@TC=25℃
115
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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