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IRF7380 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7380 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page ![]() www.irf.com 1 08/28/02 IRF7380 HEXFET® Power MOSFET High frequency DC-DC converters Benefits Applications Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Notes through are on page 8 PD - 94420 SO-8 VDSS RDS(on) max ID 80V 73m Ω@V GS = 10V 3.6A D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C dv/dt Peak Diode Recovery dv/dt V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 °C/W RθJA Junction-to-Ambient (PCB Mount) * ––– 50 2.0 -55 to + 150 Max. 3.6 2.9 29 80 ± 20 0.02 2.3 |
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