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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

Outline Drawing

Absolute Maximum Ratings

NOTES:

1. ALL DIMENSIONS IN INCHES (MILLIMETERS)

2. ALL TOLERANCES ARE ±0.001 (0.025)

3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND

4. BOND PADS ARE 0.004 (0.100) SQUARE

5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)

6. BACKSIDE METALLIZATION: GOLD

7. BOND PAD METALLIZATION: GOLD

Drain Bias Voltage (Vdd1, Vdd2)

+5.5 Vdc

RF Input Power (RFIN)(Vdd = +3 Vdc)

-5 dBm

Channel Temperature

175 °C

Continuous Pdiss (T = 85 °C)

(derate 7.69 mW/°C above 85 °C)

0.692 W

Thermal Resistance

(channel to die bottom)

130 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

HMC263

v04.0907

GaAs MMIC LOW NOISE

AMPLIFIER, 24 - 36 GHz