For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

3

HMC490

v03.0213

GaAs pHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

P1dB vs. Temperature

Gain & Noise Figure vs.

Supply Voltage@ 14 GHz, Idd= 200 mA

Power Compression @ 14 GHz

Psat vs. Temperature

Gain, Noise Figure & Output IP3 vs.

Supply Current @ 14 GHz, Vdd= 5V*

* Idd is controlled by varying Vgg

Power Dissipation

0

4

8

12

16

20

24

28

32

10

11

12

13

14

15

16

17

18

+25 C

+85 C

-55 C

FREQUENCY (GHz)

0

4

8

12

16

20

24

28

32

10

11

12

13

14

15

16

17

18

+25 C

+85 C

-55 C

FREQUENCY (GHz)

20

22

24

26

28

30

0

1

2

3

4

5

3

3.5

4

4.5

5

5.5

Gain

Noise Figure

Vdd (V)

0

5

10

15

20

25

30

35

-10

-8

-6

-4

-2

0

2

4

6

Pout

Gain

PAE

INPUT POWER (dBm)

14

18

22

26

30

34

0

1

2

3

4

5

100

125

150

175

200

Gain

IP3

Noise Figure

Idd (mA)

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-10

-8

-6

-4

-2

0

2

4

6

Max Pdis @ 85C

12 GHz

13 GHz

14 GHz

15 GHz

16 GHz

INPUT POWER (dBm)