For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

6

HMC490

v03.0213

GaAs pHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

Assembly Diagram

Pad Descriptions

Pad Number

Function

Description

Interface Schematic

1,8, 7

Vgg1, 2, 3

Gate control for amplifier. Adjust to achieve Id of 200 mA.

Please follow “MMIC Amplifier Biasing Procedure”

Application Note. External bypass capacitors of 100 pF and 0.01

µF are required.

2

RFIN

This pad is AC coupled

and matched to 50 Ohms.

3, 4, 5

Vdd1, 2, 3

Power Supply Voltage for the amplifier. External bypass capacitors

of 100 pF and 0.01 µF are required.

6

RFOUT

This pad is AC coupled

and matched to 50 Ohms.

Die Bottom

GND

Die Bottom must be connected to RF/DC ground.