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HMC498 Datasheet(PDF) 4 Page - Micross Components |
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HMC498 Datasheet(HTML) 4 Page - Micross Components |
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4 / 9 page ![]() For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 1 HMC498 v03.0713 GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz Functional Diagram Features Typical Applications General Description The HMC498 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT • Military & Space Output IP3: +34 dBm Saturated Power: +27 dBm @ 25% PAE Gain: 24 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Die Size: 2.38 x 1.46 x 0.1 mm The HMC498 is a high dynamic range GaAs pHEMT MMIC Power Amplifier which operates between 17 and 24 GHz. The HMC498 provides 24 dB of gain, +27 dBm of saturated power and 25% PAE from a +5V supply voltage. The HMC498 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 17 - 19 19 - 22 22 - 24 GHz Gain 20 23 28 21 24 28 20 23 28 dB Gain Variation Over Temperature 0.03 0.04 0.03 0.04 0.03 0.04 dB/ °C Input Return Loss 11 11 8 dB Output Return Loss 20 18 15 dB Output Power for 1 dB Compression (P1dB) 20 23.5 22 25 21 24 dBm Saturated Output Power (Psat) 27 26.5 25.5 dBm Output Third Order Intercept (IP3) 34 34 34 dBm Noise Figure 3.5 4.0 4.5 dB Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 250 275 250 275 250 275 mA Electrical Specifications, T A = +25° C, Vdd = 5V, Idd = 250mA* * Adjust Vgg between -2 to 0V to achieve Idd = 250mA typical. |
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