For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

4

HMC498

v03.0713

GaAs pHEMT MMIC

POWER AMPLIFIER, 17 - 24 GHz

Outline Drawing

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

+5.5V

Gate Bias Voltage (Vgg)

-4 to 0V

RF Input Power (RFIN)(Vdd = +5V)

+10 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 21.4mW/°C above 85 °C)

1.92 W

Thermal Resistance

(channel to die bottom)

46.8 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

ESD Sensitivity (HBM)

Class 1A

Absolute Maximum Ratings

Typical Supply Current vs. Vdd

Vdd (V)

Idd (mA)

+4.5

241

+5.0

250

+5.5

258

+3.0

240

+3.5

250

+4.0

259

Note: Amplifier will operate over full voltage ranges shown above.

Vgg adjusted to achieve Idd= 250mA at +5V and +3.5V.

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.