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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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HMC591

v02.0109

General Description

Features

Functional Diagram

The HMC591 is a high dynamic range GaAs PHEMT

MMIC 2 Watt Power Amplifier which operates from

6 to 10 GHz. This amplifier die provides 23 dB of

gain and +34 dBm of saturated power, at 24% PAE

from a +7.0V supply. Output IP3 is +43 dBm typical.

The RF I/Os are DC blocked and matched to 50

Ohms for ease of integration into Multi-Chip-Modules

(MCMs). All data is taken with the chip in a 50 ohm test

fixture connected via 0.025mm (1 mil) diameter wire

bonds of length 0.31mm (12 mils). For applications

which require optimum OIP3, Idd should be set for 940

mA, to yield +43 dBm OIP3. For applications which

require optimum output P1dB, Idd should be set for

1340 mA, to yield +33 dBm Output P1dB.

Saturated Output Power: +34 dBm @ 24% PAE

Output IP3: +43 dBm

Gain: 23 dB

DC Supply: +7.0 V @ 1340 mA

50 Ohm Matched Input/Output

2.47 mm x 2.49 mm x 0.1 mm

[1]

Typical Applications

The HMC591 is ideal for use as a power amplifier for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Test Equipment & Sensors

• Military End-Use

• Space

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

Frequency Range

6 - 10

6.8 - 9

GHz

Gain

20

23

20

23

dB

Gain Variation Over Temperature

0.05

0.05

dB/ °C

Input Return Loss

12

14

dB

Output Return Loss

11

10

dB

Output Power for 1 dB

Compression (P1dB)

30

33

30.5

33.5

dBm

Saturated Output Power (Psat)

33.5

34

dBm

43

43

dBm

Supply Current (Idd)

1340

1340

mA

[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.

[2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm

GaAs PHEMT MMIC 2 WATT

POWER AMPLIFIER, 6 - 10 GHz