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AO4606 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AO4606
Description  Complementary Enhancement Mode Field Effect Transistor
PDF  9 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4606 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

  AO4606 Datasheet HTML 1Page - Alpha & Omega Semiconductors AO4606 Datasheet HTML 2Page - Alpha & Omega Semiconductors AO4606 Datasheet HTML 3Page - Alpha & Omega Semiconductors AO4606 Datasheet HTML 4Page - Alpha & Omega Semiconductors AO4606 Datasheet HTML 5Page - Alpha & Omega Semiconductors AO4606 Datasheet HTML 6Page - Alpha & Omega Semiconductors AO4606 Datasheet HTML 7Page - Alpha & Omega Semiconductors AO4606 Datasheet HTML 8Page - Alpha & Omega Semiconductors AO4606 Datasheet HTML 9Page - Alpha & Omega Semiconductors  
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background image
AO460
6
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
1
1.9
3
V
ID(ON)
20
A
22.5
28
TJ=125°C
31.3
38
34.5
42
m
Ω
gFS
10
15.4
S
VSD
0.76
1
V
IS
3A
Ciss
680
pF
Coss
102
pF
Crss
77
pF
Rg
3
Ω
Qg(10V)
13.84
nC
Qg(4.5V)
6.74
nC
Qgs
1.82
nC
Qgd
3.2
nC
tD(on)
4.6
ns
tr
4.1
ns
tD(off)
20.6
ns
tf
5.2
ns
trr
16.5
ns
Qrr
7.8
nC
Total Gate Charge
VGS=10V, VDS=15V, ID=6.9A
Input Capacitance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
IF=6.9A, dI/dt=100A/µs
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VDS=5V, ID=6.9A
IS=1A
VGS=10V, ID=6.9A
Diode Forward Voltage
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
Ω
VGS=4.5V, ID=5.0A
Gate Threshold Voltage
VDS=VGS ID=250µA
On state drain current
VGS=4.5V, VDS=5V
µA
Gate-Body leakage current
VDS=0V, VGS=±20V
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge
Total Gate Charge
IF=6.9A, dI/dt=100A/µs
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.



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