AO4606 datasheet(3/9 Pages) AOSMD

3 / 9 page

AO460

Symbol

Min

Typ

Max

Units

BVDSS

-30

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

-1.2

-2

-2.4

ID(ON)

TJ=125°C

Ω

gFS

VSD

-0.76

-1

-4.2

Ciss

920

Coss

190

Crss

122

3.6

Ω

Qg(10V)

18.5

Qg(4.5V)

9.6

Qgs

2.7

Qgd

4.5

tD(on)

7.7

5.7

tD(off)

20.2

9.5

trr

Qrr

8.8

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

µA

Gate-Body leakage current

VDS=0V, VGS=±20V

Gate Threshold Voltage

VDS=VGS ID=-250µA

On state drain current

VGS=-10V, VDS=-5V

VGS=-10V, ID=-6A

Ω

VGS=-4.5V, ID=-5A

VDS=-5V, ID=-6A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

SWITCHING PARAMETERS

Total Gate Charge (10V)

VGS=-10V, VDS=-15V, ID=-6A

Turn-On DelayTime

VGS=-10V, VDS=-15V, RL=2.7Ω,

RGEN=3Ω

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=-6A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO4606 Datasheet(PDF) 3 Page - Alpha & Omega Semiconductors

AO4606 Datasheet(HTML) 3 Page - Alpha & Omega Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL