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HY29F080 Datasheet(PDF) 1 Page - Hynix Semiconductor |
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HY29F080 Datasheet(HTML) 1 Page - Hynix Semiconductor |
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1 / 38 page  HY29F080 8 Megabit (1M x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 70 ns n Low Power Consumption – 15 mA typical active read current – 30 mA typical program/erase current – 5 µA maximum CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write protection n Sector Erase Architecture – Sixteen equal size sectors of 64K bytes each – A command can erase any combination of sectors – Supports full chip erase n Erase Suspend/Resume – Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being erased n Sector Group Protection – Sectors may be locked in groups of two to prevent program or erase operations within that sector group n Temporary Sector Unprotect – Allows changes in locked sectors (requires high voltage on RESET# pin) n Internal Erase Algorithm – Automatically erases a sector, any combination of sectors, or the entire chip n Internal Programming Algorithm – Automatically programs and verifies data at a specified address n Fast Program and Erase Times – Byte programming time: 7 µs typical – Sector erase time: 1.0 sec typical – Chip erase time: 16 sec typical n Data# Polling and Toggle Status Bits – Provide software confirmation of completion of program or erase operations n Ready/Busy# Pin – Provides hardware confirmation of completion of program and erase operations n Minimum 100,000 Program/Erase Cycles n Space Efficient Packaging – Available in industry-standard 40-pin TSOP and 44-pin PSOP packages Revision 6.1, May 2001 GENERAL DESCRIPTION The HY29F080 is an 8 Megabit, 5 volt-only CMOS Flash memory organized as 1,048,576 (1M) bytes of eight-bits each. The device is offered in indus- try-standard 44-pin PSOP and 40-pin TSOP pack- ages. The HY29F080 can be programmed and erased in-system with a single 5-volt V CC supply. Inter- nally generated and regulated voltages are pro- vided for program and erase operations, so that the device does not require a high voltage power supply to perform those functions. The device can also be programmed in standard EPROM pro- grammers. Access times as fast as 70ns over the full operating voltage range of 5.0 volts ± 10% are offered for timing compatibility with the zero wait state requirements of high speed microprocessors. A[19:0] 20 CE# OE# WE# 8 DQ[7:0] RESET# RY/BY# LOGIC DIAGRAM |
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