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8050HS Datasheet(PDF) 1 Page - Yea Shin Technology Co., Ltd |
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8050HS Datasheet(HTML) 1 Page - Yea Shin Technology Co., Ltd |
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1 / 3 page ![]() DATA SHEET SEMICONDUCTOR http://www.yeashin.com 1 REV.02 20120705 8050HP/Q/R/S General Purpose Transistors MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5V Collector Current-continuoun IC 1500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,(1) PD TA=25°C 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance,Junction to Ambient R θJA 556 °C/W Total Device Dissipation PD Alumina Substrate,(2) TA=25°C 300 mW Derate above 25°C 2.4 mW/°C Thermal Resistance,Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T j,T St g -55 to +150 °C 1 BASE 2 EMITTER COLLECTOR 3 NPN Silicon FEATURE High current capacity in compact package. IC =1.5A. Epitaxial planar type. PNP complement: L8550H Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking 8050HP 1HA 8050HQ 1HC Shipping 3000/Tape&Reel 3000/Tape&Reel SOT–23 (TO–236AB) 1 2 3 H |
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