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50RIA Datasheet(PDF) 2 Page - International Rectifier

Part # 50RIA
Description  MEDIUM POWER THYRISTORS
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

50RIA Datasheet(HTML) 2 Page - International Rectifier

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50RIA Series
2
Bulletin I2401 rev. A 07/00
www.irf.com
Voltage
V
DRM/VRRM, max. repetitive
V
RSM , maximum non-
I
DRM/IRRM max.
Type number
Code
peak and off-state voltage (1)
repetitive peak voltage (2)
@ T
J = TJ max.
VV
mA
10
100
150
20
200
300
40
400
500
60
600
700
50RIA
80
800
900
15
100
1000
1100
120
1200
1300
140
1400
1500
160
1600
1700
I
T(AV)
Max. average on-state current
50
50
A
180° sinusoidal conduction
@ Case temperature
94
90
°C
I
T(RMS)
Max. RMS on-state current
80
80
A
I
TSM
Max. peak, one-cycle
1430
1200
A
t = 10ms
No voltage
non-repetitive surge current
1490
1257
t = 8.3ms
reapplied
1200
1010
t = 10ms
100% V
RRM
1255
1057
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
10.18
7.21
KA2s
t = 10ms
No voltage
Initial T
J = TJ max.
9.30
6.58
t = 8.3ms
reapplied
7.20
5.10
t = 10ms
100% V
RRM
6.56
4.65
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
101.8
72.1
KA2
√s t = 0.1 to 10ms, no voltage reapplied, T
J = TJ max.
V
T(TO)1
Low level value of threshold
0.94
1.02
V
(16.7% x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
T(TO)
2
High level value of threshold
1.08
1.17
(
π x I
T(AV) < I < 20 x π x IT(AV)), TJ = TJ max.
voltage
r
t1
Low level value of on-state
4.08
4.78
m
Ω
(16.7% x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ max.
slope resistance
r
t2
High level value of on-state
3.34
3.97
(
π x I
T(AV) < I < 20 x π x IT(AV)), TJ = TJ max.
slope resistance
V
TM
Max. on-state voltage
1.60
1.78
V
I
pk= 157 A, TJ = 25°C
I
H
Maximum holding current
200
mA
T
J = 25°C. Anode supply 22V, resistive load,
Initial IT = 2A
I
L
Latching current
400
Anode supply 6V, resistive load
50RIA
10 to 120
140 to 160
Parameter
Units
Conditions
ELECTRICAL SPECIFICATIONS
Voltage Ratings
On-state Conduction
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with t
p ≤ 5ms



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