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DS1482S/R Datasheet(PDF) 3 Page - Dallas Semiconductor |
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DS1482S/R Datasheet(HTML) 3 Page - Dallas Semiconductor |
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3 / 7 page ![]() DS1482 3 of 7 Figure 2. Typical Operating Circuit (21) VCCQ SH7622 µC (164) TxD0 (171) RxD0 (32) PTA0 (31) PTA1 (178) IRQ7 VCC PCTLZ VCCQ DS1482 TXD I/O RXD SPU START DONE GND IRLMS6702 RS VCC = 5V 1-Wire NETWORK VCCQ = 3.3V Selecting RS Assuming that the series resistance of the FET in on-condition can be neglected, the value of RS is limited as follows: RSmax = 0.0015 x VCCmin/I(standby,max) RSmin = 0.01 x VCCmax/I(active,min) Example: VCCmin = 4.5V, VCCmax = 5.5V I(standby,max) = 0.15mA I(active,min) = 12mA RSmax = 45 W, RSmin = 4.58W To maximize available power on the 1-Wire line, RS should be close to the lowest permissible value, in this example 5.1 W ±5%. The effect of the on-chip pullup resistor is negligible. Figure 3. DS1482 Application Signals, Normal Communication TXD SPU, START, DONE ALL LOW I/O RXD H L H L H L Figure 4. DS1482 Application Signals, Strong Pullup Case TXD SPU RXD I/O START CURRENT tCF 1 DONE 2 3 4 H L H L H L PCTLZ H L H L H L H L |
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