August 1986

2

Philips Semiconductors

Product specification

VHF power transistor

BLV75/12

DESCRIPTION

N-P-N silicon planar epitaxial

transistor primarily intended for use in

mobile radio transmitters in the

175 MHz commmunications band.

FEATURES

• multi-base structure and

emitter-ballasting resistors for an

optimum temperature profile

• gold metallization ensures

excellent reliability

• internal matching to achieve an

optimum wideband capability and

high power gain

The transistor has a 6-lead flange

envelope with a ceramic cap

(SOT-119). All leads are isolated from

the flange.

QUICK REFERENCE DATA

MODE OF OPERATION

V

f

MHz

W

dB

%

narrow band; c.w.

12,5

175

75

> 6,5

> 55

PIN CONFIGURATION

Fig.1 Simplified outlinbe, SOT119A.

handbook, halfpage

2

4

6

5

3

1

MSB006

PINNING

PIN

DESCRIPTION

1

emitter

2

emitter

3

base

4

collector

5

emitter

6

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.