BLV75 datasheet(3/11 Pages) PHILIPS

3 / 11 page

August 1986

Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLV75/12

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter)

peak value

vCBOM

max.

36 V

Collector-emitter voltage (open base)

VCEO

max.

16,5 V

Emitter-base voltage (open collector)

VEBO

max.

4 V

Collector current

d.c. or average

max.

15 A

peak value; f

> 1 MHz

ICM

max.

45 A

Total power dissipation

at Tmb =25 °C; f > 1 MHz

Ptot

max.

150 W

Storage temperature

Tstg

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. soar. Rth mb-h = 0,2 K/W.

handbook, halfpage

MGP390

102

110

16.5

102

Tmb = 25 °C

Th = 70 °C

(A)

VCE (V)

Fig.3

Power/temperature derating curves;

Rth mb-h = 0,2 K/W.

Continuous operation (f

> 1 MHz)

II Short-time operation during mismatch; (f

> 1 MHz).

handbook, halfpage

100

200

100

MGP391

Ptot

(W)

Th (°C)

ΙΙ

THERMAL RESISTANCE

Dissipation = 96 W; Tmb =25 °C

From junction to mounting base

(r.f. operation)

Rth j−mb

1,05 K/W

From mounting base to heatsink

Rth mb−h

0,2 K/W

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