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TMS27C040 Datasheet(PDF) 7 Page - Texas Instruments

Part # TMS27C040
Description  PROGRAMMABLE READ-ONLY MEMORY
PDF  12 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS27C040 Datasheet(HTML) 7 Page - Texas Instruments

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TMS27C040 524288 BY 8-BIT UV ERASABLE
TMS27PC040 524288 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
7
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
switching characteristics over recommended ranges of operating conditions (see Notes 3
and 4)
PARAMETER
TEST CONDITIONS
’27C040-10
’27 PC040-10
’27C040-12
’27 PC040-12
’27C040-15
’27 PC040-15
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
ta(A)
Access time from address
100
120
150
ns
ta(E)
Access time from chip enable
CL = 100 pF,
100
120
150
ns
ten(G) Output enable time from G
CL = 100 F,
1 Series 74
50
50
50
ns
tdis
Output disable time from G or E, whichever
occurs first
TTL load,
Input tr ≤ 20 ns,
Input tf ≤ 20 ns
0
50
0
50
0
50
ns
tv(A)
Output data valid time after change of
address, E, or G, whichever occurs first†
Input tf ≤ 20 ns
0
0
0
ns
† Value calculated from 0.5-V delta to measured output level.
NOTES:
3. For all switching characteristics the input pulse levels are 0.4 V to 2.4 V. Timing measurements are made at 2 V for logic high and
0.8 V for logic low. (See Figure 2)
4. Common test conditions apply for tdis except during programming.
switching characteristics for programming: VCC = 6.5 V and VPP = 13 V (SNAP! Pulse), TA = 25°C
(see Note 3)
PARAMETER
MIN
MAX
UNIT
tdis(G)
Output disable time from G
0
100
ns
ten(G)
Output enable time from G
150
ns
NOTE 3: For all switching characteristics the input pulse levels are 0.4 V to 2.4 V. Timing measurements are made at 2 V for logic high and
0.8 V for logic low. (See Figure 2)
timing requirements for programming
MIN
NOM
MAX
UNIT
tw(PGM)
Pulse duration, program
SNAP! Pulse programming algorithm
95
100
105
µs
tsu(A)
Setup time, address
2
µs
tsu(E)
Setup time, E
2
µs
tsu(G)
Setup time, G
2
µs
tsu(D)
Setup time, data
2
µs
tsu(VPP)
Setup time, VPP
2
µs
tsu(VCC) Setup time, VCC
2
µs
th(A)
Hold time, address
0
µs
th(D)
Hold time, data
2
µs



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