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DG418 Datasheet(PDF) 4 Page - TEMIC Semiconductors |
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DG418 Datasheet(HTML) 4 Page - TEMIC Semiconductors |
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4 / 10 page ![]() DG417/418/419 4 Siliconix S-52880—Rev. D, 28-Apr-97 Specificationsa for Unipolar Supplies Test Conditions Unless Otherwise Specified V+ 12 V V 0 V A Suffix –55 to 125 _C D Suffix –40 to 85 _C Parameter Symbol V+ = 12 V, V– = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee VANALOG Full 0 12 0 12 V Drain-Source On-Resistance rDS(on) IS = –10 mA, VD = 3.8 V V+ = 10.8 V Room 40 W Dynamic Characteristics Turn-On Time tON RL = 300 W, CL = 35 pF, VS = 8 V S Sihi Ti T Ci i Room 110 Turn-Off Time tOFF L , L p, S See Switching Time Test Circuit Room 40 ns Break-Before-Make Time Delay tD RL = 300 W, CL = 35 pF DG419 Room 60 ns Charge Injection Q CL = 10 nF, Vgen = 0 V, Rgen = 0 W Room 5 pC Power Supplies Positive Supply Current I+ Room 0.001 Negative Supply Current I– V+ = 13.2 V, VL = 5.25 V VIN = 0 or 5 V Room –0.001 mA Logic Supply Current IL IN Room 0.001 Ground Current IGND Room –0.001 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 _C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. |
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