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DG418 Datasheet(PDF) 5 Page - TEMIC Semiconductors |
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DG418 Datasheet(HTML) 5 Page - TEMIC Semiconductors |
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5 / 10 page ![]() DG417/418/419 Siliconix S-52880—Rev. D, 28-Apr-97 5 Typical Characteristics rDS(on) vs. VD and Supply Voltage 50 40 30 0 –20 –15 20 20 10 –10 –5 5 15 10 0 ID = –10 mA "10 V "15 V "20 V "12 V "8 V "5 V rDS(on) vs. Temperature 40 30 0 –15 –10 15 20 –5 0 5 10 10 25 _C –55 _C TA = 125_C Leakage Currents vs. Analog Voltage 30 20 –30 –15 –10 15 10 0 –5 0 5 10 –10 –20 V+ = 15 V V– = –15 V VL = 5 V DG417/418: ID(off), IS(off) DG419: IS(off) DG417/418: ID(on) DG419: ID(off), ID(on) Drain Charge Injection 200 150 100 –50 –15 –10 15 50 0 –5 0 5 10 100 pF 500 pF 1 nF V+ = 16.5 V V– = –16.5 V VL = 5 V VIN = 0 V CL = 10 nF Input Switching Threshold vs. Supply Voltages 3.5 3.0 2.5 0 510 40 2.0 1.5 1.0 0.5 15 20 25 30 35 (V+) –5 –10 0 –15 –10 –5 0 0 (V–) VL = 5 V VL = 7 V Operating Voltage Range Negative Supply V– (V) 50 40 30 0 0 20 10 –10 –20 –30 –40 2 42 5 V CMOS Compatible TTL Compatible VIN = 0.8 V, 2.4 V F = Voltages Used for Production Testing F F CMOS Compatible VD – Drain Voltage (V) VD or VS – Drain or Source Voltage (V) VD – Drain Voltage (V) VS – Source Voltage (V) |
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