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MS1079 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1079 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 4 page ![]() 053-7052 Rev - 10-2002 MS1079 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: DESCRIPTION: DESCRIPTION: DESCRIPTION: The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 12 A PDISS Power Dissipation 320 W TJ Junction Temperature +200 °°°°C TSTG Storage Temperature -65 to +150 °°°°C Thermal Data Thermal Data Thermal Data Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.7 °°°°C/W Features • 30 MHz • 50 VOLTS • POUT = 220 W • GP = 13 dB MINIMUM • COMMON EMITTER CONFIGURATION |
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Similar Description - MS1079 |
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