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LM5111 Datasheet(PDF) 7 Page - National Semiconductor (TI) |
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LM5111 Datasheet(HTML) 7 Page - National Semiconductor (TI) |
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7 / 10 page ![]() Typical Performance Characteristics (Continued) Delay Time vs Temperature RDSON vs Supply Voltage 20112316 20112317 UVLO Thresholds and Hysteresis vs Temperature 20112318 Detailed Operating Description LM5111 dual gate driver consists of two independent and identical driver channels with TTL compatible logic inputs and high current totem-pole outputs that source or sink current to drive MOSFET gates. The driver output consist of a compound structure with MOS and bipolar transistor oper- ating in parallel to optimize current capability over a wide output voltage and operating temperature range. The bipolar device provides high peak current at the critical threshold region of the MOSFET VGS while the MOS devices provide rail-to-rail output swing. The totem pole output drives the MOSFET gate between the gate drive supply voltage V CC and the power ground potential at the V EE pin. The control inputs of the drivers are high impedance CMOS buffers with TTL compatible threshold voltages. The LM5111 pinout was designed for compatibility with industry standard gate drivers in single supply gate driver applications. The two driver channels of the LM5111 are designed as identical cells. Transistor matching inherent to integrated circuit manufacturing ensures that the AC and DC pe- formance of the channels are nearly identical. Closely matched propagation delays allow the dual driver to be operated as a single with inputs and output pins connected. The drive current capability in parallel operation is precisely 2X the drive of an individual channel. Small differences in switching speed between the driver channels will produce a transient current (shoot-through) in the output stage when two output pins are connected to drive a single load. The efficiency loss for parallel operation has been characterized at various loads, supply voltages and operating frequencies. The power dissipation in the LM5111 increases be less than 1% relative to the dual driver configuration when operated as a single driver with inputs/ outputs connected. An Under Voltage Lock Out (UVLO) circuit is included in the LM5111 , which senses the voltage difference between V CC and the chip ground pin, V EE. When the VCC to VEE voltage difference falls below 2.8V both driver channels are disabled. The UVLO hysteresis prevents chattering during brown-out conditions and the driver will resume normal operation when the V CC to VEE differential voltage exceeds approximately 3.0V. The LM5111 is available in dual non-inverting (-1), dual Inverting (-2) and the combination inverting plus non- inverting (-3) configurations. All three configurations are of- fered in the SOIC-8 plastic package. www.national.com 7 |
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