www.irf.com

1

8/18/04

IRF6613

Notes

 through ˆ are on page 2

DirectFET

™ ISOMETRIC

MT

Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)

PD - 95881

SQ

SX

ST

MQ

MX

MT

Description

lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,

when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided

cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including

Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-

nous FET applications.

DC-DC Converters

Qg(typ.)

40V

3.4m

42nC

4.1m

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

A

Pulsed Drain Current

™

Power Dissipation

Power Dissipation

g

Power Dissipation

g

W

Single Pulse Avalanche Energy

d

mJ

Avalanche Current

Ù

A

Linear Derating Factor

fÃ

W/°C

Operating Junction and

°C

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Ambient

fj

–––

45

Junction-to-Ambient

gj

12.5

–––

Junction-to-Ambient

hj

20

–––

°C/W

Junction-to-Case

ij

–––

1.4

Junction-to-PCB Mounted

1.0

–––

-40 to + 150

0.022

1.8

200

18

89

2.8

Max.

23

18

180

±20

40

150