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WS9256 Datasheet(PDF) 4 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WS9256 Datasheet(HTML) 4 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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4 / 8 page ![]() WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WS9256ProductDescription www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 4/8 Electrical Characteristics (Unless otherwise specified, VCC=8V and TA =25 ℃) Symbol Parameter Test condition Min Typ Max Units Supply Voltage Section VDD_CLAMP VDD Clamping Voltage 4mA 17.4 18.3 19.4 V UVLO_on VDD Power Supply 16.1 17.1 18.1 V UVLO_off VDD Under Voltage Lockout 8.5 9 9 .5 V VCC_OVP VCCover voltage protection level 17.9 18.9 19.9 V Ist Start up current 35 uA Iop Operating current 152 uA Current Sense Section Ipp Primary Peak Current 484 508 531 mV TLEB Lead Edge Blanking 500 ns TDELAY Shutdown Delay 200 ns D_max Maximum Duty Cycle 42 % FeedbackInputSection Toff_max MaximumDemagnetization time 420 us Toff_min MinimumDemagnetizationt ime 4 us Ton_max MaxmiumON time 100 us Vfb FB voltage sense level 1 V Power MOSFET Idss Drain-source leakage current Vgs=0V,Vds=650V 10 uA BVdss Drain-source breakdown voltage 650 V Ron Static drain-source on-resistance 2.8 3.5 Ω Over TemperatureProtection T_comp Thermal Regulation Temperature 147 ℃ |
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