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BYV36A Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BYV36A Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 2 page ![]() 0.6 TJ =25 Pulse W idth=300 µS 0.01 0.02 0.06 0.1 0.2 0.4 2 1.0 4 100 10 BYV36D BYV36E 0.8 1.0 1.2 1.4 2.0 1.6 1.8 BYV36A ~ BYV36C 5 1 100 20 10 15 10 25 30 TJ=125 8.3ms Single Half Sine-Wave 0.25 0.50 0.75 1.00 1.25 25 50 125 175 0 75 150 100 1.50 0 1.75 Single Phase Half W ave 60Hz Resistive or Inductive Load BLGALAXY ELECTRICAL www.galaxycn.com Document Number 1561145 2. PULSE GENERATOR (NOTE2) D.U.T. 1 N.1. 50 N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) 10 N.1. (- ) (+ ) -1.0A -0.25A 0 +0.5A trr 1cm FIG.3 --PEAK FORWARD SURGE CURRENT BYV36A(Z)---BYV36E(Z) SETTIMEBASEFOR50/100 ns /cm AMBIENT TEMPERATURE, RATINGSANDCHARACTERISTICCURVES NUMBER OF CYCLES AT 60 Hz NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.2 --FORWARD DERATING CURVE INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS FIG.4--TYPICAL FORWARD CHARACTERISTIC FIG.4--TYPICAL JUNCTION CAPACITANCE 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O .1 .2 .4 1.0 2 4 10 20 40 100 1 2 4 10 20 40 60 100 TJ=25 f=1MHz |
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