BU323Z datasheet(3/8 Pages) ONSEMI

3 / 8 page

BU323Z

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Collector−Emitter Clamping Voltage (IC = 7.0 A)

(TC = −40°C to +125°C)

VCLAMP

350

−

450

Vdc

Collector−Emitter Cutoff Current

(VCE = 200 V, IB = 0)

ICEO

−

100

mAdc

Emitter−Base Leakage Current

(VEB = 6.0 Vdc, IC = 0)

IEBO

−

mAdc

ON CHARACTERISTICS (1)

Base−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 100 mAdc)

(IC = 10 Adc, IB = 0.25 Adc)

VBE(sat)

−

2.2

2.5

Vdc

Collector−Emitter Saturation Voltage

(IC = 7.0 Adc, IB = 70 mAdc)

(TC = 125°C)

(IC = 8.0 Adc, IB = 0.1 Adc)

(TC = 125°C)

(IC = 10 Adc, IB = 0.25 Adc)

VCE(sat)

−

1.6

1.8

2.1

1.7

Vdc

Base−Emitter On Voltage

(IC = 5.0 Adc, VCE = 2.0 Vdc)

(TC = −40°C to +125°C)

(IC = 8.0 Adc, VCE = 2.0 Vdc)

VBE(on)

1.1

1.3

−

2.1

2.3

Vdc

Diode Forward Voltage Drop

(IF = 10 Adc)

−

2.5

Vdc

DC Current Gain

(IC = 6.5 Adc, VCE = 1.5 Vdc)

(TC = −40°C to +125°C)

(IC = 5.0 Adc, VCE = 4.6 Vdc)

hFE

150

500

−

3400

−

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)

−

2.0

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

−

200

Input Capacitance

(VEB = 6.0 V)

Cib

−

550

CLAMPING ENERGY (see notes)

Repetitive Non−Destructive Energy Dissipated at turn−off:

(IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4)

WCLAMP

200

−

SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)

Fall Time

(IC = 6.5 A, IB1 = 45 mA,

VBE(off) = 0, RBE(off) = 0,

VCC = 14 V, VZ = 300 V)

tfi

−

625

−

Storage Time

tsi

−

Cross−over Time

−

1.7

−

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.

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