VOW135, VOW136

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Vishay Semiconductors

Rev. 1.1, 26-Mar-15

2

Document Number: 84156

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Fig. 1 - Maximum Power vs. Operating Temperature

PARAMETER

CONDITIONS

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

3V

Forward current

25

mA

Peak forward current

t = 1 ms, duty cycle 50 %

50

mA

Maximum surge forward current

t

≤ 1 μs, 300 pulses/s

1A

Power dissipation

45

mW

Input junction temperature

125

°C

OUTPUT

Supply voltage

-0.5 to 30

V

Output voltage

-0.5 to 25

V

Emitter base voltage

5V

Average output current

8mA

Peak output current

16

mA

Base current

5mA

Power dissipation

100

mW

Output junction temperature

125

°C

COUPLER

Storage temperature range

-55 to +150

°C

Ambient temperature range

-40 to +100

°C

Soldering temperature

max.

≤ 10 s, dip soldering ≥ 0.5 mm

distance from case bottom

260

°C

0

20

40

60

80

100

0

25

50

75

100

125

T

Output Detector

IR-LED