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LMX2216 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LMX2216
Description  0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications
PDF  12 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMX2216 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Pin Description
Pin
Pin
IO
Description
No
Name
1VCC M
I
Voltage supply for the mixer The input voltage level to this pin should be a DC Voltage ranging from
285V to 315V
2
GND
Ground
3
LNAIN
I
RF input signal to the LNA External DC blocking capacitor is required
4
GND
Ground
5
GND
Ground
6RFIN
I
RF input to the mixer The RF signal to be down converted is connected to this pin External DC
blocking capacitor is required
7
GND
Ground
8
PWDN
I
Power down signal pin Both the LNA and mixer are powered down when a HIGH level is applied to
this pin (VIH)
9IFOUT
O
IF output signal of the mixer External DC blocking capacitor is required
10
GND
Ground
11
LOIN
I
Local oscillator input signal to the mixer External DC blocking capacitor is required
12
GND
Ground
13
GND
Ground
14
LNAOUT
O
Output of the LNA This pin outputs the amplified RF signal External DC blocking capacitor is
required
15
GND
Ground
16
VCC A
I
LNA supply Voltage DC Voltage ranging from 285V to 315V
Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage (VCC)
65V
Storage Temperature (TS)
b
65 Cto a150 C
Operating Temperature (TO)
b
40 Cto a85 C
Recommended Operating
Conditions
Supply Voltage (VCC)
285V – 315V
Operating Temperature (TA)
b
10 Cto a70 C
RFIN
01 GHz to 20 GHz
LOIN
01 GHz to 20 GHz
2



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