SI7447DP datasheet(2/5 Pages) VISHAY

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Si7447DP

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71970

S-21475—Rev. A, 26-Aug-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 mA

-1.0

-3.0

VDS = 0 V, VGS = "20 V

"100

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "25 V

"200

VDS = -24 V, VGS = 0 V

-1

Zero Gate Voltage Drain Current

IDSS

VDS = -24 V, VGS = 0 V, TJ = 70_C

-10

On-State Drain Currenta

ID(on)

VDS = -5 V, VGS = -10 V

-30

Drain-Source On-State Resistancea

rDS(on)

VGS = -10 V, ID = -24 A

0.0047

0.006

Forward Transconductancea

gfs

VDS = -15 V, ID = -24 A

Diode Forward Voltagea

VSD

IS = -2.9 A, VGS = 0 V

-0.71

-1.1

Dynamicb

Total Gate Charge

113

170

Gate-Source Charge

Qgs

VDS = -15 V, VGS = -10 V, ID = -24 A

Gate-Drain Charge

Qgd

32.5

Turn-On Delay Time

td(on)

Rise Time

VDD = -15 V, RL = 15 W

Turn-Off Delay Time

td(off)

VDD = -15 V, RL = 15 W

ID ^ -1 A, VGEN = -10 V, RG = 6 W

180

270

Fall Time

130

200

Gate Resistance

Source-Drain Reverse Recovery Time

trr

IF = -2.9 A, di/dt = 100 A/ms

100

150

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

1234

VGS = 10 thru 5 V

TC = 125_C

-55

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

3 V

4 V

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