STR71XF datasheet(37/49 Pages) STMICROELECTRONICS

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STR71xF - ELECTRICAL CHARACTERISTICS

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2.9 Flash Electrical characteristics

V33 = 3.3 ± 10%, TA = -40 / 85 °C unless otherwise specified.

Table 19. Flash Program/Erase Characteristics 1

Note

C0: TA = 85 °C after 0 cycles

Cmax: TA = 85 °C after max number of cycles

Table 20. Flash Program/Erase Characteristics 2

Symbol

Parameter

Test Conditions

Value

Unit

Typ

Max(C0) Max(Cmax)

tPW

Word Program

µs

tPDW

Double Word Program

µs

tPB0

Bank 0 Program (256K)

Double Word Program

1.6

2.1

4.3

tPB1

Bank 1 Program (16K)

Double Word Program

130

170

300

tES

Sector Erase (64K)

Not preprogrammed

Preprogrammed

2.3

1.9

4.0

3.3

4.9

4.1

tES

Sector Erase (8K)

Not preprogrammed

Preprogrammed

0.7

0.6

1.1

1.0

1.36

1.26

tES

Bank 0 Erase (256K)

Not preprogrammed

Preprogrammed

8.0

6.6

13.7

11.2

17.2

14.0

tES

Bank 1 Erase (16K)

Not preprogrammed

Preprogrammed

0.9

0.8

1.5

1.3

1.87

1.66

tRPD

Recovery from Power-Down

µs

tPSL

Program Suspend Latency

µs

tESL

Erase Suspend Latency

300

µs

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

Max

Endurance

kcycles

Endurance (Bank1 sectors)

100

kcycles

Data Retention

Years

tESR

Erase Suspend Rate

Min time from Erase

Resume to next Erase

Suspend

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