NTS4409N datasheet(2/5 Pages) ONSEMI

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NTS4409N, NVS4409N

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 20 V

TJ = 25°C

0.5

TJ = 70°C

2.0

TJ = 125°C

5.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 8.0 V

100

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.65

1.5

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

−2.0

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 0.6 A

249

350

VGS = 2.7 V, ID = 0.2 A

299

400

VGS = 4.5 V, ID = 1.2 A

260

Forward Transconductance

gFS

VDS = 5.0 V, ID = 0.5 A

0.5

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = 10 V

Output Capacitance

COSS

22.4

Reverse Transfer Capacitance

CRSS

8.0

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V,

ID = 0.8 A

1.2

1.5

Threshold Gate Charge

QG(TH)

0.2

Gate−to−Source Charge

QGS

0.28

0.50

Gate−to−Drain Charge

QGD

0.3

0.40

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDS = 15 V,

ID = 0.7 A, RG = 51 W

5.0

Rise Time

8.2

8.0

Turn−Off Delay Time

td(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 0.6 A

TJ = 25°C

0.82

1.20

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

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