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SIR482DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIR482DP Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 13 page ![]() Document Number: 66849 S10-2253-Rev. A, 04-Oct-10 www.vishay.com 3 Vishay Siliconix SiR482DP New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 14 28 42 56 70 0 0.5 1.0 1.5 2.0 2.5 VGS =10 V thru 4V VGS =2V VGS =1V VGS =3V V DS - Drain-to-Source Voltage (V) 0.003 0.004 0.005 0.006 0.007 0.008 0 14284256 70 VGS =10V VGS =4.5 V I D - Drain Current (A) 0 2 4 6 8 10 0 5.2 10.4 15.6 20.8 26.0 ID =10A VDS =10V VDS =15V VDS =5V Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0 1 234 5 TC = - 55 °C TC = 125 °C TC = 25 °C V GS - Gate-to-Source Voltage (V) Crss 0 420 840 1260 1680 2100 0 5 10 15 20 25 30 Ciss Coss V DS - Drain-to-Source Voltage (V) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 ID =10A VGS =10V VGS =4.5 V T J - Junction Temperature (°C) |
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