SIR482DP datasheet(4/13 Pages) VISHAY

4 / 13 page

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Document Number: 66849

S10-2253-Rev. A, 04-Oct-10

Vishay Siliconix

SiR482DP

New Product

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.001

0.1

100

TJ = 25 °C

TJ = 150 °C

SD - Source-to-Drain Voltage (V)

- 0.8

- 0.6

- 0.4

- 0.2

0.2

0.4

- 50

- 25

100

125

150

ID =5mA

ID = 250 μA

J - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.006

0.012

0.018

0.024

0.030

012

ID =10A

TJ =25 °C

TJ = 125 °C

GS - Gate-to-Source Voltage (V)

120

160

200

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

0.01

0.1

10 s

10 ms

0.1

TA = 25 °C

Single Pulse

1ms

BVDSS Limited

100 ms

Limited by RDS(on)*

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

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