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SISA18DN Datasheet(PDF) 1 Page - Vishay Siliconix |
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SISA18DN Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 13 page  Vishay Siliconix SiSA18DN New Product Document Number: 62579 S12-2051-Rev. A, 27-Aug-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Gen IV Power MOSFET •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC Power Supplies • High Current Power Rails in Computing • Telecom POL and Bricks • Battery Protection Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 °C/W. f. Based on TC = 25 °C. PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) f Qg (Typ.) 30 0.0075 at VGS = 10 V 38.3 6.9 nC 0.0120 at VGS = 4.5 V 30.2 Ordering Information: SiSA18DN-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 3.30 mm 3.30 mm PowerPAK® 1212-8 Bottom View N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS + 20, - 16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 38.3 A TC = 70 °C 30.6 TA = 25 °C 15.3a, b TA = 70 °C 12.1a, b Pulsed Drain Current (t = 300 µs) IDM 70 Continuous Source-Drain Diode Current TC = 25 °C IS 18 TA = 25 °C 2.9a, b Single Pulse Avalanche Current L = 0.1 mH IAS 10 Single Pulse Avalanche Energy EAS 5 mJ Maximum Power Dissipation TC = 25 °C PD 19.8 W TC = 70 °C 12.7 TA = 25 °C 3.2a, b TA = 70 °C 3a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, e t 10 s RthJA 31 39 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 56.3 |
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