SISA18DN datasheet(4/13 Pages) VISHAY

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Document Number: 62579

S12-2051-Rev. A, 27-Aug-12

Vishay Siliconix

SiSA18DN

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.001

0.01

0.1

100

0.0

0.3

0.6

0.9

1.2

1.5

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

100

125

150

J - Temperature (°C)

D = 250 μA

D = 5 mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.006

0.012

0.018

0.024

0.030

02468

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 10 A

0.001

0.01

0.1

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

0.1

100

0.01

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 μs

100 ms

Limited by R

DS(on)*

1 ms

DM Limited

A = 25 °C

Single Pulse

BVDSS Limited

10 ms

10 s

1 s

D Limited

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