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VT40L45PW Datasheet(PDF) 2 Page - Vishay Siliconix |
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VT40L45PW Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() VT40L45PW www.vishay.com Vishay General Semiconductor Revision: 08-Jan-13 2 Document Number: 89396 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Free air, without heatsink RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode IF = 5 A TA = 25 °C VF (1) 0.39 - V IF = 10 A 0.43 - IF = 20 A 0.49 0.57 IF = 5 A TA = 125 °C 0.27 - IF = 10 A 0.33 - IF = 20 A 0.41 0.50 Reverse current per diode VR = 45 V TA = 25 °C IR (2) -5 mA TA = 125 °C 32 70 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT40L45PW UNIT Typical thermal resistance per diode RJC 1.5 °C/W per device 0.8 per device RJA (1)(2) 50 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-3PW VT40L45PW-M3/4W 4.5 4W 30/tube Tube 0 5 10 15 20 25 30 35 40 45 0 255075 100 125 150 Case Temperature (°C) Rth JA = RthJC = 0.8 °C/W Rth JA = 50 °C/W 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0 2 4 6 8 10 12 14 16 18 20 22 24 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 1.0 D = 0.8 D = t p/T t p T |
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