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STL140N6F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL140N6F7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() April 2017 DocID025086 Rev 5 1/13 This is information on a product in full production. www.st.com STL140N6F7 N- channel 60 V, 2.4 mΩ typ., 140 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STL140N6F7 60 V 2.8 mΩ 140 A 125 W Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STr ipFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL140N6F7 140N6F7 PowerFLAT™ 5x6 Tape and reel |
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