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STYN875 Datasheet(PDF) 3 Page - Sirectifier Semiconductors |
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STYN875 Datasheet(HTML) 3 Page - Sirectifier Semiconductors |
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3 / 3 page ![]() STYN875 thru STYN1875 Thyristor Discretes (SCRs) 100 101 102 103 104 0,0 0,1 0,2 0,3 0,4 Z thJC [K/W] 80 dc = 1 60 0.5 0.4 0.33 0.17 0.08 40 20 0 0 25 50 100 125 150 IT(AV)M [A] 75 TC [°C] Fig. 6 Max. forward current at case temperature t [ms] Fig. 8 Transient thermal impedance junction to case 0 20 40 0 20 40 60 80 I T(AV) [A] P (AV) [W] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0 50 100 150 T amb [°C] dc = 1 0.5 0.4 0.33 0.17 0.08 10 100 1000 1 10 100 1000 1 10 100 1000 10000 0,1 1 10 VG [V] tgd [µs] typ. Limit TVJ = 125°C I G [mA] Fig. 4 Gate trigger characteristics I G [mA] Fig. 5 Gate controlled delay time 6 4 5 2 1 3 1: IGD, TVJ= 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C R thHA 0.6 0.8 1.0 2.0 4.0 8.0 4: PGAV= 0.5 W 5: PGM = 5 W 6: PGM = 10 W R thi [K/W] t i [s] 0.044 0.011 0.039 0.0001 0.047 0.02 0.09 0.4 0.18 0.12 P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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