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2SC2859 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # 2SC2859
Description  Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

2SC2859 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

  2SC2859 Datasheet HTML 1Page - Galaxy Semi-Conductor Holdings Limited 2SC2859 Datasheet HTML 2Page - Galaxy Semi-Conductor Holdings Limited 2SC2859 Datasheet HTML 3Page - Galaxy Semi-Conductor Holdings Limited 2SC2859 Datasheet HTML 4Page - Galaxy Semi-Conductor Holdings Limited  
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Production specification
Silicon Epitaxial Planar Transistor
2SC2859
C100
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=35V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=1V,IC=100mA
VCE=6V,IC=400mA
70
25
400
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=10mA
0.1
0.25
V
Base-emitter voltage
VBE
VCE=1V, IC=100mA
0.8
1.0
V
Collector output capacitance
Cob
VCB=6V,IE=0,f=1MHz
7
pF
Transition frequency
fT
VCE=6V, IC= 20mA
300
MHz
CLASSIFICATION OF hFE(1)
Rank
O
Y
G
Range
70-140
120-240
200-400



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