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ACST1235-8FP Datasheet(PDF) 2 Page - STMicroelectronics |
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ACST1235-8FP Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 13 page ![]() Characteristics ACST1235-8FP 2/13 DocID026033 Rev 1 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Test conditions Value Unit IT(RMS) On-state rms current (full sine wave) Tc = 97 °C 12 A ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) tp = 16.7 ms 105 A tp = 20 ms 100 I2tI2t value for fusing (full cycle sine wave) tp = 10 ms 66 A²s dI/dt Critical rate of rise on-state current IG = 2 x IGT, tr ≤ 100 ns F = 60Hz Tj = 150 °C 100 A/µs VDRM/VRRM Repetitive peak off-state voltage Tj = 150 °C 800 V VPP(1) Non repetitive line peak pulse voltage Tj = 25 °C 2 kV (dI/dt)BO(1) Non repetitive critical current rate of rise at breakover Tj = 25 °C 150 A/µs IGM Peak gate current tp = 20 µs Tj = 150 °C 1 A PGM Peak gate power tp = 20 µs Tj = 150 °C 10 W PG(AV) Average gate power dissipation Tj = 150 °C 0.1 W Tstg Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C Vins(rms) Insulation rms voltage (60 seconds) 1.500 V 1. according to test described by standard IEC 61000-4-5 (see Figure 19) Table 3. Electrical characteristics Symbol Test conditions Quadrant Tj Value Unit IGT VD = 12 V, RL = 33 Ω I - II - III 25 °C MAX. 35 mA MIN. 1.75 VGT VD = 12 V, RL = 33 Ω I - II - III 25 °C MAX. 1.0 V VGD VD = VDRM, RL = 3.3 kΩ I - II - III 150 °C MIN. 0.2 V IH(1) IT = 500 mA, gate open 25 °C MAX. 30 mA IL IG = 1.2 x IGT I - II - III 25 °C MAX. 40 mA dV/dt(1) VD = 67% VDRM/VRRM, gate open 125 °C MIN. 4000 V/µs 150 °C MIN. 2000 (dI/dt)c(1) Without snubber 125 °C MIN. 12 A/ms (dI/dt)c = 15 V/µs 150 °C MIN. 6 VCL ICL = 0.1 mA, tp = 1 ms MIN. 850 V 1. For both polarities of OUT pin referenced to COM pin |
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