ACST1235-8FP datasheet(4/13 Pages) STMICROELECTRONICS

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Characteristics

ACST1235-8FP

4/13

DocID026033 Rev 1

Figure 6. On-state characteristics

(maximum values)

Figure 7. Surge peak on-state current versus

number of cycles

I(A)

100

012

V(V)

j max :

to = 0.9 V

d = 38 m

j = 25 °C

j= 150°C

0.0

0.5

1.0

1.5

2.0

-50

-25

100

125

150

2.5

IH,IL[Tj] / IH,IL[Tj = 25 °C]

Tj (°C)

Figure 8. Non repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10 ms, and corresponding value of I²t

Figure 9. Relative variation of gate trigger

current and gate trigger voltage versus junction

temperature (typical values)

(A), I t (A s)

TSM

100

1000

0.01

0.10

1.00

10.00

dI/dt limitation: 100 A/μs

ITSM

I²t

t(ms)

Tj initial = 25°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

100

125

150

IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C]

Tj (°C)

IGT Q3

IGT Q1- Q2

VGT Q1- Q2 - Q3

Figure 10. Relative variation of holding current

and latching current versus junction

temperature (typical values)

Figure 11. Relative variation of critical rate of

decrease of main current (dI/dt)c versus

reapplied (dV/dt)c

0.0

0.5

1.0

1.5

2.0

-50

-25

100

125

150

Tj (°C)

2.5

IH,IL[Tj] / IH,IL[Tj = 25 °C]

0.1

1.0

10.0

100.0

(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c

j =150 °C

(dV/dt)c (V/µs)

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